Atomically thin semiconductors for complementary field effect transistors

Atomically thin body (ATB) semiconductors such as transition metal dichalcogenides (TMDs) hold tremendous promise for scaling modern electronics because their ultra-thin channel provides excellent gate electrostatics. Major semiconductor companies and international roadmaps for devices and systems have cited ATB TMDs for sub-1-nm semiconductor technologies beyond 2030. ATOMS will focus on developing ultra-scaled complementary field effect transistors (CFETs) based on ATB semiconductors, offering a transformative approach to address the scaling challenges of current semiconductor technology. The project aims to create ultra-short channel CFETs by optimising electrical contacts, developing ideal dielectrics, and integrating multiple pristine interfaces into the CFET structure. Key objectives are the development of clean van der Waals contacts for low contact resistance and high ON state current, fabrication of ideal semiconductor/dielectric interfaces for efficient switching, and novel engineering methods to tune the threshold voltages of both n- and p-type FETs. Additionally, the project will focus on synthesis of wafer scale monolayer TMDs, and seamless integration of all these components to achieve high-performance CFETs. By employing industry compatible fabrication processes, the ATOMS project aims to advance these technologies toward practical applications in next generation low-power electronics. This will position CFETs based on ATB semiconductors as a foundational technology for future electronic devices.